PART |
Description |
Maker |
LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM Static RAMs (1Mb) Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
|
BSI
|
BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
BS62LV2007 |
Asynchronous 2M(256Kx8) bits Static RAM From old datasheet system
|
BSI
|
N64T1630C1BZ-70I |
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M × 16 Bits
|
http:// NanoAmp Solutions, Inc.
|
UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|
BS62LV2016SI BS62LV2009 BS62LV2009DC BS62LV2009DC- |
Asynchronous 2M(256Kx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY 16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS45S16400J-6TLA1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
List of Unclassifed Man...
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